Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions

Abstract

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.

References in corpus (4)

• Microwave Oscillations of a Nanomagnet Driven by a Spin-Polarized Current
• Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
• Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
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Cited by in corpus (54)

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