Double exchange mechanisms for Mn doped III-V ferromagnetic semiconductors
arXiv:cond-mat/0311525 · doi:10.1103/PhysRevB.70.195215
Abstract
A microscopic model of indirect exchange interaction between transition metal impurities in dilute magnetic semiconductors (DMS) is proposed. The hybridization of the impurity d-electrons with the heavy hole band states is largely responsible for the transfer of electrons between the impurities, whereas Hund rule for the electron occupation of the impurity d-shells makes the transfer spin selective. The model is applied to such systems as type GaN:Mn and type (Ga,Mn)As, type (Ga,Mn)P. In type DMS with Mn impurities the exchange mechanisms is rather close to the kinematic exchange proposed by Zener for mixed-valence Mn ions. In type DMS ferromagnetism is governed by the kinematic mechanism involving the kinetic energy gain of heavy hole carriers caused by their hybridization with 3d electrons of Mn impurities. Using the molecular field approximation the Curie temperatures are calculated for several systems as functions of the impurity and hole concentrations. Comparison with the available experimental data shows a good agreement.
Submitted to PRB
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Cited by in corpus (15)
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- On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
- Why RKKY exchange integrals are inappropriate to describe ferromagnetism in diluted magnetic semiconductors
- Superexchange in Dilute Magnetic Dielectrics: Application to (Ti,Co)O_2
- Ultrafast Magnetization Dynamics in Diluted Magnetic Semiconductors
- Three--body Correlation Effects on the Spin Dynamics of Double--Exchange Ferromagnets
- Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN
- Magnetic properties of wurtzite (Ga,Mn)As
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- Collective excitations in a magnetically doped quantized Hall ferromagnet
- Orbital polaron in double exchange ferromagnets