Electronic States and Magnetism of Mn Impurities and Dimers in Narrow-Gap and Wide-Gap III-V Semiconductors
arXiv:cond-mat/0411598 · doi:10.1103/PhysRevB.72.195202
Abstract
Electronic states and magnetic properties of single impurity and dimer doped in narrow-gap and wide-gap - semiconductors have been studied systematically. It has been found that in the ground state for single impurity, - complex is antiferromagnetic (AFM) coupling when - hybridization is large and both the hole level and the impurity level are close to the midgap; or very weak ferromagnetic (FM) when is small and both and are deep in the valence band. In dimer situation, the spins are AFM coupling for half-filled or full-filled orbits; on the contrast, the Mn spins are double-exchange-like FM coupling for any -orbits away from half-filling. We propose the strong {\it p-d} hybridized double exchange mechanism is responsible for the FM order in diluted - semiconductors.
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