Nonlinear screening and percolative transition in a two-dimensional electron liquid
arXiv:cond-mat/0310010 · doi:10.1103/PhysRevB.69.121409
Abstract
A novel variational method is proposed for calculating the percolation threshold, the real-space structure, and the thermodynamical compressibility of a disordered two-dimensional electron liquid. Its high accuracy is verified against prior numerical results and newly derived exact asymptotics. The inverse compressibility is shown to have a strongly asymmetric minimum at a density that is approximately the triple of the percolation threshold. This implies that the experimentally observed metal-insulator transition takes place well before the percolation point is reached.
4 pages, 2 figures. (v2) minor changes (v3) reference added (v4) few more references added
References in corpus (8)
- Metallic behavior and related phenomena in two dimensions
- Unexpected Behavior of the Local Compressibility Near the B=0 Metal-Insulator Transition
- Topographic Mapping of the Quantum Hall Liquid using a Few-Electron Bubble
- Wigner Glass, Spin-liquids, and the Metal-Insulator Transition
- Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition
- Near-field spectroscopy of a gated electron gas: a direct evidence for electrons localization
- Metal-Insulator Transition of Disordered Interacting Electrons
- The Droplet State and the Compressibility Anomaly in Dilute 2D Electron Systems
Cited by in corpus (30)
- Colloquium: Graphene spectroscopy
- Transport in strongly correlated two dimensional electron fluids
- Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with Anderson Localization Model
- 2D Metal-Insulator transition as a percolation transition
- Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems
- Anomalously large capacitance of a plane capacitor with a two-dimensional electron gas
- The so-called two dimensional metal-insulator transition
- Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition
- Strongly correlated two-dimensional plasma explored from entropy measurements
- Neutrality point of graphene with coplanar charged impurities
- The 2D metal-insulator transition as a strong localization induced crossover phenomenon
- Electronic phase separation: recent progress in the old problem
- Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
- Giant suppression of the Drude conductivity due to quantum interference in disordered two-dimensional systems
- The effect of electron dielectric response on the quantum capacitance of graphene in a strong magnetic field
- Charge inhomogeneities and transport in semiconductor heterostructures with a manganese -layer
- Magnetotransport in disordered delta-doped heterostructures
- Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
- Probing Electron Interactions in a Two-Dimensional System by Quantum Magneto-Oscillations
- Giant capacitance of a plane capacitor with a two-dimensional electron gas in a magnetic field
- Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?
- Electrostatics of two-dimensional structures: exact solutions and approximate methods
- Magnetic field induced Coulomb blockade in small disordered delta-doped heterostructures
- Spin polarization in modulation-doped GaAs quantum wires
- Bolometric arrays and infrared sensitivity of VO2 films with varying stoichiometry
- Quantum capacitance of an HgTe quantum well as an indicator of the topological phase
- Phase Separation in Two-Dimensional Electron Systems: Experimental View
- Electronic response of graphene to linelike charge perturbations
- Growth of Tall Vertical Carbon Nanotube Forests using Al-Fe Catalysts and Transfer to Flexible Substrates
- Resonant optical gating of suspended carbon nanotube transistor