Many-body effect in spin dephasing in n-typed GaAs quantum wells

Abstract

By constructing and numerically solving the kinetic Bloch equations we perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in $n$-typed GaAs (100) quantum wells for high temperatures. In our study, we include the spin-conserving scattering such as the electron-phonon, the electron-nonmagnetic impurity as well as the electron-electron Coulomb scattering into consideration. The dephasing obtained from our theory contains not only that due to the effective spin-flip scattering first proposed by D'yakonov and Perel' [Zh. Eksp. Teor. Fiz. {\bf 60}, 1954(1971)[Sov. Phys.-JETP {\bf 38}, 1053(1971)]], but also the recently proposed many-body dephasing due to the inhomogeneous broadening provided by the DP term [Wu, J. Supercond.:Incorp. Novel Mechanism {\bf 14}, 245 (2001); Wu and Ning, Eur. Phys. J. B {\bf 18}, 373 (2000)]. Our result agrees with the experiment data [Malinowski {\em et al.}, Phys. Rev. B {\bf 62}, 13034 (2000)] very well. We further show that in the case we study, the spin dephasing is dominated by the many-body effect.

arXiv comment4 pages, 2 figures in eps format

References in corpus (5)

• Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
• Kinetics of spin coherence of electrons in an undoped semiconductor quantum well
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
• Rashba-effect-induced spin dephasing in n-typed InAs quantum wells
• Spin dephasing in n-typed GaAs quantum wells in the presence of high magnetic fields in Voigt configuration

Cited by in corpus (6)

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• Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and $p$-type GaAs quantum wells from a fully microscopic approach
• Effects of strain, electric, and magnetic fields on lateral electron spin transport in semiconductor epilayers
• Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
• Spin relaxation time, spin dephasing time and ensemble spin dephasing time in $n$-type GaAs quantum wells