Multiband tight-binding model of local magnetism in GaMnAs

Abstract

We present the spin and orbitally resolved local density of states (LDOS) for a single Mn impurity and for two nearby Mn impurities in GaAs. The GaAs host is described by a sp^3 tight-binding Hamiltonian, and the Mn impurity is described by a local p-d hybridization and on-site potential. Local spin-polarized resonances within the valence bands significantly enhance the LDOS near the band edge. For two nearby parallel Mn moments the acceptor states hybridize and split in energy. Thus scanning tunneling spectroscopy can directly measure the Mn-Mn interaction as a function of distance.

5 pages, 4 figures

References in corpus (1)

• Van Hove features in BSCCO(2212) and effective parameters for Ni impurities inferred from STM spectra

Cited by in corpus (5)

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• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• Disorder, spin-orbit, and interaction effects in dilute ${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{As}$
• Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs