Quasi-ballistic transport in HgTe quantum-well nanostructures

Abstract

The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 $\mu$m. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semi-classical electron trajectories show good agreement with the experiment.

3 pages, 3 figures; minor revisions: replaced "inelastic mean free path" with "transport mean free path"; corrected typing errors; restructered most paragraphs for easier reading; accepted for publication in APL

Cited by in corpus (15)

• Topological insulators and superconductors
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• The Quantum Spin Hall Effect: Theory and Experiment
• Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
• Spin polarization of the quantum spin Hall edge states
• Direct observation of the Aharonov-Casher phase
• Corner Junction as a Probe of Helical Edge States
• Coherent wave-packet evolution in coupled bands
• Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime
• Spin polarizations and spin Hall currents in a two-dimensional electron gas with magnetic impurities
• Low-symmetry non-local transport in microstructured squares of delafossite metals
• Perfect transmission of 3D massive Kane fermions in HgCdTe Veselago lenses
• Nonlinear magneto-gyrotropic photogalvanic effect
• Low-damage electron beam lithography for nanostructures on Bi${}_2$Te${}_3$-class topological insulator thin films
• Topological p-n junctions in helical edge states