In situ photoemission study of the room-temperature ferromagnet ZnGeP_2:Mn

Abstract

The chemical states of the ZnGeP${}_2$:Mn interface, which shows ferromagnetism above room-temperature, has been studied by photoemission spectroscopy. Mn deposition on the ZnGeP${}_2$ substrate heated to 400${}^{\circ }$C induced Mn substitution for Zn and then the formation of metallic Mn-Ge-P compounds. Depth profile studies have shown that Mn 3$d$ electrons changed their character from itinerant to localized along the depth, and in the deep region, dilute divalent Mn species ($\textless$ 5 % Mn) was observed with a coexisting metallic Fermi edge of non-Mn 3$d$ character. The possibility of hole doping through Mn substitution for Ge and/or Zn vacancy is discussed.

arXiv comment4 pages, 5 figures

References in corpus (2)

• Origin of room-temperature ferromagnetism in Mn doped semiconducting CdGeP2
• Electronic structure of In${}_{1-x}$Mn${}_x$As studied by photoemission spectroscopy: Comparison with Ga${}_{1-x}$Mn${}_x$As

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