Spin relaxation in n-doped gallium arsenide due to impurity and electron-electron Elliot-Yafet scattering

Abstract

We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with disimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin relaxation times in gallium arsenide.

14 pages, 4 figures

References in corpus (5)

• Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
• Spin relaxation of conduction electrons in bulk III-V semiconductors
• Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors
• Magnetic-field dependence of electron spin relaxation in n-type semiconductors
• Spin relaxation and antisymmetric exchange in n-doped III-V semiconductor

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• Ab initio Ultrafast Spin Dynamics in Solids
• D'yakonov-Perel' spin relaxation for degenerate electrons in the electron-hole liquid
• Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors
• Hole spin relaxation in $p$-type GaAs quantum wires
• The role of electron-electron scattering in spin transport
• Effective Field Theories for Electrons in Crystalline Structures