Localization effects and inelastic scattering in disordered heavy electrons

Abstract

We study ground state and finite temperature properties of disordered heavy fermion metals by using a generalization of dynamical mean field theory which incorporates Anderson localization effects. The emergence of a non-Fermi liquid metallic behavior even at moderate disorder is shown to be a universal phenomenon resulting from local density of states fluctuations. This behavior is found to have a character of an electronic Griffiths phase, and can be thought of as a precursor of Anderson localization in a strongly correlated host. The temperature dependence of the conducting properties of the system reveal a non-trivial interplay between disorder and inelastic processes, which is reminiscent of the Mooij correlations observed in many disordered metals.

20 pages, 19 figures

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Cited by in corpus (18)

• Rare region effects at classical, quantum, and non-equilibrium phase transitions
• Disorder-Driven Non-Fermi Liquid Behavior of Correlated Electrons
• Inhomogeneous metallic phase upon disordering a two dimensional Mott insulator
• Anderson-Hubbard model with box disorder: Statistical dynamical mean-field theory investigation
• Mott-Hubbard and Anderson metal-insulator transitions in correlated lattice fermions with binary disorder
• Nanoscale Dynamical Mean-Field Theory for Molecules and Mesoscopic Devices in the Strong-Correlation Regime
• The geometrically-averaged density of states as a measure of localization
• Effective model of the electronic Griffiths phase
• Universal quantum criticality at the Mott-Anderson transition
• Metallic ground state and glassy transport in single crystalline URh${}_2$Ge${}_2$: Enhancement of disorder effects in a strongly correlated electron system
• Universal Distribution of Kondo Temperatures in Dirty Metals
• Typical-Medium Theory of Mott-Anderson Localization
• Mott-Anderson transition in disordered charge transfer model: insights from typical medium theory
• Electronic Griffiths Phase in the Te - Doped Semiconductor FeSb${}_2$
• Quantum criticality at the Anderson transition: a TMT perspective
• Optical conductivity of a metal-insulator transition for the Anderson-Hubbard model in 3 dimensions away from 1/2 filling
• Ground state properties of the disordered spin-one Bose-Hubbard model: a stochastic mean-field theory study
• Photo-emission signatures of coherence breakdown in Kondo alloys: dynamical mean-field theory approach