paper

Dynamical mean-field studies of metal-insulator transitions

arXiv:cond-mat/9706231 · doi:10.1098/rsta.1998.0149

Abstract

We discuss the successes of the dynamical mean field (DMF) approach to metal insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.

18 pages; Contribution to the Royal Society Discussion Meeting on "The Metal-Non Metal Transition in Macroscopic and Microscopic Systems", March 5-6, 1997

References in corpus (4)

Cited by in corpus (33)