Statistical dynamical mean-field description of strongly correlated disordered electron-phonon systems

Abstract

Combining the self-consistent theory of localization and the dynamical mean-field theory, we present a theoretical approach capable of describing both self-trapping of charge carriers during the process of polaron formation and disorder-induced Anderson localization. By constructing random samples for the local density of states (LDOS) we analyze the distribution function for this quantity and demonstrate that the typical rather than the mean LDOS is a natural measure to distinguish between itinerant and localized states. Significant polaron effects on the mobility edge are found.

5 pages, 3 figures, contribution to the Strongly Correlated Electron Systems Conference, Krakow 2002

References in corpus (1)

• Dynamics of a single electron in the disordered Holstein model

Cited by in corpus (18)

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• Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe${}_2$
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• Comparative numerical study of Anderson localization in disordered electron systems
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• A perturbational study of the lifetime of a Holstein polaron in the presence of weak disorder
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• Diffusion and localization in quantum random resistor networks
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