Universal quantum criticality at the Mott-Anderson transition
arXiv:1208.5053 · doi:10.1103/PhysRevLett.110.066401
Abstract
We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects, dramatically modify the quantum critical behavior near disordered Mott transitions. The leading critical behavior of quasiparticle wavefunctions is shown to assume a universal form in the full range from weak to strong disorder, in contrast to disorder-driven non-Fermi liquid ("electronic Griffiths phase") behavior, which is found only in the strongly correlated regime.
4 pages + references, 4 figures; v2: minor changes, accepted for publication in Phys. Rev. Lett
References in corpus (12)
- Complexity in Strongly Correlated Electronic Systems
- Metallic behavior and related phenomena in two dimensions
- Theoretical Studies of Superconductor-Insulator Transitions
- Mean field theory of the Mott-Anderson transition
- Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective
- Disorder Screening in Strongly Correlated Systems
- Electronic Griffiths phase of the d=2 Mott transition
- Anderson-Hubbard model with box disorder: Statistical dynamical mean-field theory investigation
- Localization effects and inelastic scattering in disordered heavy electrons
- Localization of correlated fermions in optical lattices with speckle disorder
- Typical-Medium Theory of Mott-Anderson Localization
- 2D-MIT as self-doping of a Wigner-Mott insulator
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