Mott-Anderson transition in disordered charge transfer model: insights from typical medium theory
arXiv:1306.5244 · doi:10.1103/PhysRevB.89.165138
Abstract
The Mott-Anderson transition in the disordered charge-transfer model displays several new features in comparison to what is found in the disordered single-band Hubbard model, as recently demonstrated by large-scale computational (statistical dynamical mean field theory) studies. Here we show that a much simpler typical medium theory approach (TMT-DMFT) to the same model is able to capture most qualitative and even quantitative aspects of the phase diagram, the emergence of an intermediate electronic Griffiths phase, and the critical behavior close to the metal-insulator transition. Conceptual and mathematical simplicity of the TMT-DMFT formulation thus makes it possible to gain useful new insight into the mechanism of the Mott-Anderson transition in these models.
10 pages, 12 figures, v2: to appear in Phys. Rev. B
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Cited by in corpus (7)
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- Spin-selective localization of correlated lattice fermions
- Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films
- Transport and spectroscopic signatures of a disorder-stabilized metal in two-dimensional frustrated Mott insulators