paper

Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model

arXiv:0906.4777 · doi:10.1103/PhysRevB.80.035129

Abstract

We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first order character due to coexistence of solutions. The hole doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.

18 pages, 19 figures

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