Spin-polarized light emitting diode using metal/insulator/semiconductor structures

Abstract

We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.

4 pages including 3 figures

References in corpus (1)

• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor

Cited by in corpus (9)

• Spin dynamics in semiconductors
• Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
• Electrical spin injection into p-doped quantum dots through a tunnel barrier
• Spin injection into a ballistic semiconductor microstructure
• Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
• Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets
• Schottky-barrier induced spin dephasing in spin injection
• Selective Spin Injection Controlled by Electrical way in Ferromagnet/Quantum Dot/Semiconductor system
• Ballistic spin filtering across the ferromagnetic-semiconductor interface