Ferromagnetic interface engineering of spin-charge conversion in RuO${}_2$

Abstract

Spin-orbit torque efficiency is conventionally fixed by bulk materials. $D$-wave altermagnets introduce an additional nonrelativistic spin-charge conversion channel beyond inverse spin-Hall effect. Using prototypical candidate RuO${}_2$ as an example, we show that the adjacent ferromagnet alone can dictate both the magnitude and sign of spin-charge conversion. Spin-pumping measurements on RuO${}_2$/Y${}_3$Fe${}_5$O${}_{12}$ (YIG) and RuO${}_2$/Ni${}_{80}$Fe${}_{20}$ (Py) bilayers yield opposite effective spin-Hall angles that persist across crystalline and polycrystalline RuO${}_2$. Inserting an ultrathin Au spacer at the RuO${}_2$/YIG interface reverses the signal, envidencing a dominant interfacial inverse Rashba-Edelstein effect, whereas RuO${}_2$/Py is governed by bulk inverse spin-Hall effect. First-principles calculations trace this dichotomy to interface-selective band hybridization: Rashba surface states survive at the insulating YIG contact yet are quenched by metallic Py. Our findings establish ferromagnetic interfacing as a deterministic knob for tailoring spin-charge conversion in altermagnetic oxides, paving the way to field-free, low-dissipation spintronic memory devices.

7 pages, 4 figures

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