Magnetically Modulated Electrical Switching in an Antiferromagnetic Transistor

Abstract

A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr, a van der Waals (vdW) antiferromagnetic semiconductor, as the channel material. Unlike the weak magnetic tunability of in-plane currents previously reported in vdW magnets, the channel current of our transistor is efficiently tuned by both gate voltage and magnetic transitions, achieving a magnetoresistance ratio as high as 1500%. Combining measurement and theoretical modeling, we reveal magnetically modulated carrier concentration as the origin of the large magnetoresistance. The strategy of using both magnetic ordering and electric field in the same device to control ON/OFF states of a transistor opens a new avenue of energy-efficient spintronics for memory, logic and magnetic sensing applications.

References in corpus (9)

• The bulk van der Waals layered magnet CrSBr is a quasi-1D material
• Dynamic Magnetic Crossover at the Origin of the Hidden-Order in van der Waals Antiferromagnet CrSBr
• Probing defects and spin-phonon coupling in CrSBr via resonant Raman scattering
• Universal spin wavepacket transport in van der Waals antiferromagnets
• Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS${}_4$
• EuCd${}_2$As${}_2$: a magnetic semiconductor
• Charge Density Wave and Ferromagnetism in Intercalated CrSBr
• Nonvolatile Electric Control of Antiferromagnet CrSBr
• Direct visualization of surface spin-flip transition in MnBi4Te7

Cited by in corpus (2)

• Space-Charge-Limited van der Waals Spin Transistor
• Van der Waals Antiferromagnets: From Early Discoveries to Future Directions in the 2D Limit