Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
arXiv:2502.01346 · doi:10.1016/j.sse.2024.109035
Abstract
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.