Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Abstract

We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a 650 nm diode. The NIR laser has $\approx$1 mW on chip power, 6 nm of spectral coverage, instantaneous linewidth of 720$\pm$80 kHz, and 12 dB side mode suppression ratio (SMSR). The red laser has 15 dB SMSR.

6 pages, 3 figures, SPIE Photonics West Conference

References in corpus (2)

• Integrated Pockels Laser
• Hybrid integrated semiconductor lasers with silicon nitride feedback circuits