Hybrid integrated semiconductor lasers with silicon nitride feedback circuits
arXiv:1911.10820 · doi:10.3390/photonics7010004
Abstract
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
arXiv comment25 pages, 16 figures
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Cited by in corpus (16)
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- Invited Review: Micro-fabricated components for cold atom sensors
- Piezoelectric actuation for integrated photonics
- Semiconductor Laser Linewidth Theory Revisited
- Sub-kHz-linewidth external-cavity laser (ECL) with SiN resonator used as a tunable pump for a Kerr frequency comb
- High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding
- Scalable switched slab coupler based optical phased array on silicon nitride
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- Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles
- Dual-laser self-injection locking to an integrated microresonator