Integrated Pockels Laser

Abstract

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0$\times$10${}^{18}$ Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

References in corpus (2)

• Electro-optically tunable single-frequency lasing from neodymium-doped lithium niobate microresonators
• Tunable single-mode laser on thin film lithium niobate

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• High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding
• Electro-optically tunable single-frequency lasing from neodymium-doped lithium niobate microresonators
• Fundamental charge noise in electro-optic photonic integrated circuits
• Octave Spanning Visible to SWIR Integrated Coil-Stabilized Brillouin Lasers
• Versatile, fast and accurate frequency excursions with a semiconductor laser
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• Arbitrary laser frequency modulation algorithm based on iterative on-the-fly deconvolution