Spin relaxation of localized electrons in monolayer MoSe${}_2$: importance of random effective magnetic fields

Abstract

We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe${}_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe${}_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe${}_2$ layer.

6 pages, 4 figures

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Cited by in corpus (1)

• Impact of the out-of-plane conductivity on spin transport evaluation in a van der Waals material