Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers

Abstract

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.

References in corpus (30)

• Two Dimensional Atomic Crystals
• Berry Phase Effects on Electronic Properties
• Physics of thin-film ferroelectric oxides
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Monolayer honeycomb structures of group IV elements and III-V binary compounds
• Strain-induced gap modification in black phosphorus
• Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
• Anomalous Hall Effect and Magnetic Monopoles in Momentum-Space
• Observation of the nonlinear Hall effect under time reversal symmetric conditions
• Giant Electroresistance in Ferroelectric Tunnel Junctions
• Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
• Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale
• High-frequency rectification via chiral Bloch electrons
• Berry curvature dipole current in transition metal dichalcogenides family
• Berry curvature dipole senses topological transition in a moiré superlattice
• Emergence of ferroelectricity and spin-valley properties in two-dimensional honeycomb binary compounds
• Electrically tuneable nonlinear anomalous Hall effect in two-dimensional transition-metal dichalcogenides WTe2 and MoTe2
• Terahertz detection based on nonlinear Hall effect without magnetic field
• Ferroelectric nonlinear anomalous Hall effect in few-layer WTe${}_2$
• Topological currents in black phosphorus with broken inversion symmetry
• Quantum geometry induced second harmonic generation
• Two-dimensional ferroelectric tunnel junction: the case of monolayer In:SnSe/SnSe/Sb:SnSe homostructure
• Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
• Prediction of ferroelectricity-driven Berry curvature enabling charge- and spin-controllable photocurrent in tin telluride monolayers
• Two-dimensional metals for piezotronics devices based on Berry curvature dipole
• Electrical Detection of Ferroelectric-like Metals through Nonlinear Hall Effect
• Quantum Kinetic Theory of Nonlinear Optical Currents: Finite Fermi surface and Fermi sea contributions
• Berry curvature induced nonlinear magnetoresistivity in two dimensional systems
• Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer
• Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides