Engineering band structures of two-dimensional materials with remote moire ferroelectricity
arXiv:2405.12811 · doi:10.1038/s41467-024-53440-w
Abstract
The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moire is delivered by a long-range electrostatic potential. The constructed superlattices by moire ferroelectricity represent a highly flexible approach, as they involve the separation of the moire construction layer from the electronic transport layer. This remote moire is identified as a weak potential and can coexist with conventional moire. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moire ferroelectricity.
References in corpus (16)
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
- Superconductivity in rhombohedral trilayer graphene
- Interfacial ferroelectricity in marginally twisted 2D semiconductors
- Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
- Cumulative Polarization Coexisting with Conductivity at Interfacial Ferroelectrics
- Composite super-moiré lattices in double aligned graphene heterostructures
- Topological and stacked flat bands in bilayer graphene with a superlattice potential
- Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
- Moire Potential, Lattice Relaxation and Layer Polarization in Marginally Twisted MoS2 Bilayers
- Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
- Gate-tunable topological phases in superlattice modulated bilayer graphene
- Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate
- Fractional quantum anomalous Hall effects in rhombohedral multilayer graphene in the moiréless limit and in Coulomb imprinted superlattice
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- Magnetic Bloch States at Integer Flux Quanta Induced by Super-moiré Potential in Graphene Aligned with Twisted Boron Nitride
- On the origin of anomalous hysteresis in graphite/boron nitride transistors
- Review of the tight-binding method applicable to the properties of moiré superlattices
- Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating
- Electronic phonon-induced magnetism in moiré Mott-Wigner crystals
- Interplay of interlayer distance and in-plane lattice relaxations in encapsulated twisted bilayers
- Manipulating Charge Distribution in Moiré Superlattices by Light