Electronic conduction and superconducting properties of CoSi films on silicon--an unconventional superconductor with technological potential
arXiv:2401.17601 · doi:10.1016/j.cjph.2024.04.018
Abstract
We report observations of unusual normal-state electronic conduction properties and superconducting characteristics of high-quality CoSi/Si films grown on silicon Si(100) and Si(111) substrates. A good understanding of these features shall help to address the underlying physics of the unconventional pairing symmetry recently observed in transparent CoSi/TiSi heterojunctions [S. P. Chiu \textit{et al.}, Sci. Adv. \textbf{7}, eabg6569 (2021); Nanoscale \textbf{15}, 9179 (2023)], where CoSi/Si is a superconductor with a superconducting transition temperature (1.1--1.5) K, dependent on its dimensions, and TiSi is a normal metal. In CoSi/Si films, we find a pronounced positive magnetoresistance caused by the weak-antilocalization effect, indicating a strong Rashba spin-orbit coupling (SOC). This SOC generates two-component superconductivity in CoSi/TiSi heterojunctions. The CoSi/Si films are stable under ambient conditions and have ultralow 1/ noise. Moreover, they can be patterned via the standard lithography techniques, which might be of considerable practical value for future scalable superconducting and quantum device fabrication.
arXiv comment15 pages, 12 figures, 2 tables
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