Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride
arXiv:2401.01300 · doi:10.1021/acs.nanolett.3c01208
Abstract
Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices.
8 pages, 5 figures
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