paper

Sub-ppm Nanomechanical Absorption Spectroscopy of Silicon Nitride

arXiv:2312.05249 · doi:10.1021/acs.nanolett.4c00737

Abstract

Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the absorption of a dielectric thin film at the parts-per-million (ppm) level, and use it to characterize the absorption of stoichiometric silicon nitride (SiN), a ubiquitous low-loss optomechanical material. Specifically, we track the frequency shift of a high- SiN trampoline resonator in response to photothermal heating by a mW laser beam, and infer the absorption of the thin film from a model including thermal stress relaxation and both radiative and conductive heat transfer. A key insight is the presence of two thermalization timescales, a rapid ( sec) timescale due to radiative thermalization of the SiN thin film, and a slow ( sec) timescale due to parasitic heating of the Si device chip. We infer the extinction coefficient of SiN to be ppm in the 532 - 1550 nm wavelength range, comparable to bounds set by waveguide resonators and notably lower than estimates with membrane-in-the-middle cavity optomechanical systems. Our approach is applicable to a broad variety of nanophotonic materials and may offer new insights into their potential.

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