Possible gapless helical edge states in hydrogenated graphene
arXiv:2312.04195 · doi:10.1038/s41598-024-68558-6
Abstract
Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a large band gap about 1 eV. Remarkably, by changing the spatial pattern of the hydrogenation, topologically distinct states can be realized, where the topological nontriviality is detected by parity indices in bulk and confirmed by the existence of gapless edge/interface states as protected by the mirror and sublattice symmetries. The analysis of the wave functions reveals that the helical edge states in hydrogenated graphene with the appropriate design carry pseudospin currents that are reminiscent of the quantum spin Hall effect. Our work shows the potential of hydrogenated graphene in pseudospin-based device applications.
9 pages, 5 figures
References in corpus (12)
- The electronic properties of graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- Control of graphene's properties by reversible hydrogenation
- Chaotic Dirac billiard in graphene quantum dots
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Scheme to Achieve Silicon Topological Photonics
- Fluorographene: Two Dimensional Counterpart of Teflon
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Atomic-scale control of graphene magnetism using hydrogen atoms
- Graphene Antidot Lattices - Designed Defects and Spin Qubits