Isotope engineering for spin defects in van der Waals materials

Abstract

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center (${\mathrm{V}}_{\mathrm{B}}^{-}$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to ${\mathrm{V}}_{\mathrm{B}}^{-}$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded ${\mathrm{V}}_{\mathrm{B}}^{-}$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, ${\mathrm{V}}_{\mathrm{B}}^{-}$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the ${\mathrm{V}}_{\mathrm{B}}^{-}$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

8+5+12 pages, 4+5+8 figures

References in corpus (10)

• Realization of a multi-node quantum network of remote solid-state qubits
• Probing magnetism in 2D materials at the nanoscale with single spin microscopy
• Experimental Realization of Universal Geometric Quantum Gates with Solid-State Spins
• Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures
• Quantum many-body theory of qubit decoherence in a finite-size spin bath
• Observation of a many-body-localized discrete time crystal with a programmable spin-based quantum simulator
• Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities
• Optically-active spin defects in few-layer thick hexagonal boron nitride
• Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
• Excited-state spectroscopy of spin defects in hexagonal boron nitride

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• Intrinsic high-fidelity spin polarization of charged vacancies in hexagonal boron nitride
• Quantum Sensing of Broadband Spin Dynamics and Magnon Transport in Antiferromagnets
• Coherent Spins in van der Waals Semiconductor GeS2 at Ambient Conditions
• Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride
• Magnetic-field dependent VB- spin decoherence in hexagonal boron nitrides: A first-principles study
• First-principles computational methods for quantum defects in two-dimensional materials: A perspective
• Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials
• Universal Reconstruction of Complex Magnetic Profiles with Minimum Prior Assumptions
• Systematic characterization of nanoscale $h$-BN quantum sensor spots created by helium-ion microscopy
• Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
• Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
• Nuclear Spin-Mediated Relaxation Mechanisms of the V${}_B^{-}$ Center in hBN