Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
arXiv:2307.04897 · doi:10.1038/s41467-024-45583-7
Abstract
Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7 % for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 m, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.
References in corpus (4)
- Radio-frequency detected fast charge sensing in undoped silicon quantum dots
- The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling
- Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
- Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
Cited by in corpus (27)
- The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling
- Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
- Coherent spin qubit shuttling through germanium quantum dots
- Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling
- High-fidelity single-spin shuttling in silicon
- Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
- High-fidelity spin qubit shuttling via large spin-orbit interaction
- Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
- Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
- Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
- Flying Spin Qubits in Quantum Dot Arrays Driven by Spin-Orbit Interaction
- Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
- Near-Term Spin-Qubit Architecture Design via Multipartite Maximally-Entangled States
- Partial Landau-Zener transitions and applications to qubit shuttling
- Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
- Electron qubits surfing on acoustic waves: review of recent progress
- All-electrical operation of a spin qubit coupled to a high-Q resonator
- Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
- Automated Charge Transition Detection in Quantum Dot Charge Stability Diagrams
- Single-shot latched readout of a quantum dot qubit using barrier gate pulsing
- Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
- Electrical Interconnects for Silicon Spin Qubits
- Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
- Decoherence and fidelity enhancement during shuttling of entangled spin qubits
- Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
- Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation
- Numerical simulation of coherent spin-shuttling in a QuBus with charged defects