Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

Abstract

This study focuses on the properties of the B${}_{\text{i}}$O${}_{\text{i}}$ (interstitial Boron~-~interstitial Oxygen) and C${}_{\text{i}}$O${}_{\text{i}}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$\Omega \cdot$cm were irradiated with fluence values between \SI{1e15}{\per\square\centi\meter} and \SI{6e15}{\per\square\centi\meter}. Such diodes cannot be fully depleted and thus the accurate evaluation of defect concentrations and properties (activation energy, capture cross-section, concentration) from Thermally Stimulated Currents (TSC) experiments alone is not possible. In this study we demonstrate that by performing Thermally Stimulated Capacitance (TS-Cap) experiments in similar conditions to TSC measurements and developing theoretical models for simulating both types of B${}_{\text{i}}$O${}_{\text{i}}$ signals generated in TSC and TS-Cap measurements, accurate evaluations can be performed. The changes of the position-dependent electric field, the effective space charge density $N_{\text{eff}}$ profile as well as the occupation of the B${}_{\text{i}}$O${}_{\text{i}}$ defect during the electric field dependent electron emission, are simulated as a function of temperature. The macroscopic properties (leakage current and $N_{\text{eff}}$) extracted from current-voltage and capacitance-voltage measurements at \SI{20}{\celsius} are also presented and discussed

References in corpus (1)

• Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade

Cited by in corpus (1)

• On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission