9 citations · 16 across the 5 of their papers we have counts for
5 papers
On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission
Niels Sorgenfrei, Yana Gurimskaya, Anja Himmerlich +4
The elusive X-Defect, a defect found in low-resistivity -type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i…
Defects and acceptor removal in 60Co γ-irradiated p-type silicon
Anja Himmerlich, Núria Castelló-Mor, Esteban Currás-Rivera +11
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the a…
Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
Chuan Liao, Eckhart Fretwurst, Erika Garutti +6
In this work, the effects of Co -ray irradiation on high resistivity -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, a…
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
Chuan Liao, Eckhart Fretwurst, Erika Garutti +8
This study focuses on the properties of the BO (interstitial Boron~-~interstitial Oxygen) and CO (interstitial Carbon~-~interstitial Oxy…
Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
Anja Himmerlich, Nuria Castello-Mor, Esteban Curras Rivera +7
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a signif…