6 citations · 6 across the 2 of their papers we have counts for
2 papers
physics.app-ph2023★ 6 cited
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
Chuan Liao, Eckhart Fretwurst, Erika Garutti +8
This study focuses on the properties of the BO (interstitial Boron~-~interstitial Oxygen) and CO (interstitial Carbon~-~interstitial Oxy…
cond-mat.mes-hall2011
Comment on "Shallow donor states near a semiconductor-insulator-metal interface"
L. F. Makarenko, O. A. Lavrova
In a recent paper Hao et al. [Phys. Rev. B 80, 035329 (2009)] reported variational calculations of energy spectrum for shallow hydrogenic donor in the structure of semiconductor/in…