Pausing ultrafast melting by timed multiple femtosecond-laser pulses
arXiv:2306.08159 · doi:10.1038/s42005-025-02238-3
Abstract
An intense femtosecond-laser excitation of a solid induces highly nonthermal conditions. In materials like silicon, laser-induced bond-softening leads to a highly incoherent ionic motion and eventually nonthermal melting. But is this outcome an inevitable consequence, or can it be controlled? Here, we performed ab initio molecular dynamics simulations of crystalline silicon after timed multiple femtosecond-laser pulse excitations with fluence above the nonthermal melting threshold. Our results demonstrate an excitation mechanism that pauses nonthermal melting and creates a metastable state instead, with an electronic structure similar to the ground state. This mechanism can be generalized to other materials, potentially enabling structural and/or electronic transitions to metastable phases in the high-excitation regime. In addition, our approach could be used to switch off nonthermal contributions in experiments, allowing reliable electron-phonon coupling constants to be obtained more easily.
Letter plus Suppl. Mat
References in corpus (15)
- Giant modulation of optical nonlinearity by Floquet engineering
- Theory of Thermal Relaxation of Electrons in Semiconductors
- Thermal and nonthermal melting of silicon under femtosecond x-ray irradiation
- Entanglement view of dynamical quantum phase transitions
- Toward precise simulations of the coupled ultrafast dynamics of electrons and atomic vibrations in materials
- Ab initio electron-phonon interactions in correlated electron systems
- Coherent and Incoherent Structural Dynamics in Laser-Excited Antimony
- Observing Dynamical Quantum Phase Transitions through Quasilocal String Operators
- First-Principles Determination of Electron-Ion Couplings in the Warm Dense Matter Regime
- Ab initio Ultrafast Spin Dynamics in Solids
- Ultrafast lattice disordering can be accelerated by electronic collisional forces
- Ultrafast hot carrier relaxation in silicon monitored by phase-resolved transient absorption spectroscopy
- Direct observation of ultrafast thermal and non-thermal lattice deformation of polycrystalline Aluminum film
- Electron-phonon coupling in semiconductors at high electronic temperatures
- Saturable absorption in highly excited silicon and its suppression at the surface