evidence for nonthermal characteristics in ultrafast laser melting
arXiv:1602.00387 · doi:10.1103/PhysRevB.94.184310
Abstract
Laser melting of semiconductors has been observed for almost 40 years; surprisingly, it is not well understood where most theoretical simulations show a laser-induced thermal process. nonadiabatic simulations based on real-time time-dependent density functional theory reveal intrinsic nonthermal melting of silicon, at a temperature far below the thermal melting temperature of 1680 K. Both excitation threshold and time evolution of diffraction intensity agree well with experiment. Nonthermal melting is attributed to excitation-induced drastic changes in bonding electron density, and the subsequent decrease in the melting barrier, rather than lattice heating as previously assumed in the two-temperature models.
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Cited by in corpus (10)
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- The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability
- Manipulating Weyl quasiparticles by orbital-selective photoexcitation in WTe2
- Momentum-resolved TDDFT algorithm in atomic basis for real time tracking of electronic excitation
- Energy relaxation and electron-phonon coupling in laser-excited metals
- Picosecond-scale Heterogeneous Melting of Metals at Extreme Non-equilibrium States
- Pausing ultrafast melting by timed multiple femtosecond-laser pulses
- A Unified Heterogeneous Implementation of Numerical Atomic Orbitals-Based Real-Time TDDFT within the ABACUS Package