Electron-phonon coupling in semiconductors at high electronic temperatures

Abstract

A nonperturbative dynamical coupling approach based on tight-binding molecular dynamics is used to evaluate the electron-ion (electron-phonon) coupling parameter in irradiated semiconductors as a function of the electronic temperature up to ~25,000 K. The method accounts for arbitrary electronic distribution function via the Boltzmann equation, enabling a comparative analysis of various models: fully equilibrium electronic distribution, band-resolved local equilibria (distinct temperatures and chemical potential of electrons in the valence and the conduction band), and a full nonequilibrium distribution. It is demonstrated that the nonequilibrium produces the electron-phonon coupling parameter different by at most ~35% from its equilibrium counterpart for identical deposited energy density, allowing to use the coupling parameter as a function of the single electronic equivalent (or kinetic) temperature. The following 14 semiconductors are studied here - group IV: Si, Ge, SiC; group III-V: AlAs, AlP, GaP, GaAs, GaSb; oxides: ZnO, TiO2, Cu2O; layered PbI2; ZnS and B4C.

References in corpus (8)

• Laser damage in silicon: energy absorption, relaxation and transport
• Electron-phonon coupling in metals at high electronic temperatures
• Theory of Thermal Relaxation of Electrons in Semiconductors
• Thermal and nonthermal melting of silicon under femtosecond x-ray irradiation
• Modeling time-resolved kinetics in solids induced by extreme electronic excitation
• Reconciling anomalously fast heating rate in ion tracks with low electron-phonon coupling
• Three-temperature modeling of laser-induced damage process in silicon
• Dependence of nonthermal metallization kinetics on bond ionicity of compounds

Cited by in corpus (6)

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• Ultrafast X-ray induced damage and nonthermal melting in cadmium sulfide
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• Thermodynamic properties of CrMnFeCoNi high entropy alloy at elevated electronic temperatures
• Stainless steel in an electronically excited state
• Ultrafast X-ray interaction with photovoltaic materials: Thermal and nonthermal responses