Three-temperature modeling of laser-induced damage process in silicon

Abstract

Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well, showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon relaxation time has a significant effect on pulse duration dependence of electron emission.

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Cited by in corpus (4)

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• Prediction of Hot Zone-center Optical Phonons in Laser Irradiated Molybdenum Disulfide with a Semiconductor Multitemperature Model
• Electron-phonon coupling in semiconductors at high electronic temperatures
• Saturable absorption in highly excited silicon and its suppression at the surface