Nearly perfect spin polarization of noncollinear antiferromagnets

Abstract

Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative materials for spintronics due to their stability against magnetic perturbations, absence of stray fields, and ultrafast dynamics. For antiferromagnets,however, the concept of spin polarization and its relevance to the measured electrical response are elusive due to nominally zero net magnetization.Here, we define an effective momentum-dependent spin polarization and reveal an unexpected property of many noncollinear antiferromagnets to exhibit nearly 100% spin polarization in a broad area of the Fermi surface. This property leads to the emergence of an extraordinary tunneling magnetoresistance (ETMR) effect in antiferromagnetic tunnel junctions (AFMTJs). As a representative example, we predict that a noncollinear antiferromagnet Mn${}_3$GaN exhibits nearly 100% spin-polarized states that can efficiently tunnel through low-decay-rate evanescent states of perovskite oxide SrTiO${}_3$ resulting in ETMR as large as $10^4$%. Our results uncover hidden functionality of material systems with noncollinear spin textures and open new perspectives for spintronics.

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Cited by in corpus (6)

• Spin-Polarized Antiferromagnetic Spintronics
• Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions
• Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance
• Achieving Altermagnetism in Monolayer Holey Graphyne via Atomic Manipulation
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Ab initio study of magnetoresistance effect in $\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}/\mathrm{MgO}/\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}$ antiferromagnetic tunnel junction