Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits
arXiv:2303.17307 · doi:10.1364/OL.492505
Abstract
Understanding and mitigating optical loss is critical to the development of high-performance photonic integrated circuits (PICs). Especially in high refractive index contrast compound semiconductor (III-V) PICs, surface absorption and scattering can be a significant loss mechanism, and needs to be suppressed. Here, we quantify the optical propagation loss due to surface state absorption in a suspended GaAs photonic integrated circuits (PIC) platform, probe its origins using X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE), and show that it can be mitigated by surface passivation using alumina (). We also explore potential routes towards achieving passive device performance comparable to state-of-the-art silicon PICs
arXiv comment8 pages, 8 figures, Comments welcome !!! v2: fixed typo in equation 1, minor edits in text
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