Monolayer V2MX4: A new family of quantum anomalous Hall insulators
arXiv:2303.14685 · doi:10.1103/PhysRevLett.132.106602
Abstract
We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V ( W, Mo; S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number . The large topological gap originates from the \emph{deep} band inversion between spin up bands contributed by orbitals of V and spin down band from orbital of at Fermi level. Remarkably, the Curie temperature of monolayer V is predicted to be much higher than that of monolayer MnBiTe. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the -orbitals here applies to a large class of ternary transition metal chalcogenide such as TiW with the space group -. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.
7 pages, 4 figures
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Cited by in corpus (4)
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- Universally optimizable strategy for magnetic gaps towards high-temperature quantum anomalous Hall states via magnetic-insulator/topological-insulator building-blocks
- Intrinsic antiferromagnetic topological insulator and axion state in V2WS4
- An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBiTe