Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure

Abstract

Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.

25 pages, 7 figures

References in corpus (11)

• Charge insensitive qubit design derived from the Cooper pair box
• Black-box superconducting circuit quantization
• Universal stabilization of a parametrically coupled qubit
• Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits
• Blackbox Quantization of Superconducting Circuits using exact Impedance Synthesis
• Superconducting resonators with voltage-controlled frequency and nonlinearity
• Detecting induced $p\pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit
• Controlling Fermi level pinning in near-surface InAs quantum wells
• Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island
• High-Kinetic Inductance Additive Manufactured Superconducting Microwave Cavity
• Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions

Cited by in corpus (3)

• Gatemonium: A Voltage-Tunable Fluxonium
• Fermionic quantum computation with Cooper pair splitters
• Engineering a Josephson junction chain for the simulation of the clock model