Long-range permeation of wave function and superficial surface state due to strong quantum size effects in topological Bi/BiSb heterojunctions
arXiv:2211.16017 · doi:10.1103/PhysRevB.106.245303
Abstract
The quantum size effect has a significant impact on electrons, such that it can even change their topologically protected properties. An example of this phenomenon is the gap opening in the topologically protected gapless surface state in finite-thickness topological-insulator films. However, much is not known about the quantum size effect in topological heterojunctions. In this study, by calculating the single-particle spectrum of Bi/BiSb based on the well-known Liu-Allen model, we found that the strong quantum size effect in topological heterojunctions yields an unexpected band alignment. The wave functions permeate each other through the attached materials, and this occurs even in 80-nm-thick heterojunctions. Furthermore, we theoretically found that one of the two major spectra obtained from the Bi surface does not represent the true surface state of Bi. This finding may overturn the previous understanding of the topological surface state of Bi.
8 pages, 8 figures
References in corpus (12)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Surface States of the Topological Insulator Bi_{1-x}Sb_x
- Strong spin-orbit splitting on Bi surfaces
- Finite size effects of helical edge states in HgTe/CdTe quantum wells
- Transport Properties and Diamagnetism of Dirac Electrons in Bismuth
- Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
- Electronic phase transitions of bismuth under strain from relativistic self-consistent GW calculations
- Bulk Band Structure of BiTe
- Surface band structure of (111)
- topology of bismuth
- Interaction between interface and massive states in multivalley topological heterostructures