Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters

Abstract

Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy constant is theoretically studied. Assuming that WER is much smaller than unity, and junction parameters obey a normal distribution, we show that the WER obeys a logarithmic normal distribution. We derive analytical expressions for the probability density function and statistical measures. We find that the coefficient of variation of WER can be reduced by decreasing the pulse width. We also perform numerical simulations based on the Fokker-Planck equation and confirm the validity of the analytical expressions. The results are useful for designing reliable STT MRAMs.

8 pages, 4 figures, typos corrected, hyperlinks added

References in corpus (2)

• Spin-transfer pulse switching: From the dynamic to the thermally activated regime
• Switching speed distribution of spin-torque-induced magnetic reversal

Cited by in corpus (2)

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