Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa

Abstract

We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV), respectively. These measured pressure induced shifts are in good agreement with ab initio calculations that take into account the lattice compression based on the equation of state of diamond and that are extended to the case of the tin-vacancy (SnV) center. This work provides guidance on the use of group-IV-vacancy centers as quantum sensors under extreme pressures that will exploit their specific optical and spin properties induced by their intrinsic inversion-symmetric structure.

7 pages, 4 figures

References in corpus (3)

• All-optical formation of coherent dark states of silicon-vacancy spins in diamond
• All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
• Quantum control of the tin-vacancy spin qubit in diamond

Cited by in corpus (6)

• Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures
• The impact of strain on the GeV-color center in diamond
• Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
• Magneto-optical properties of Group-IV--vacancy centers in diamond upon hydrostatic pressure
• Modeling the Zero-Phonon Line of Strained SnV Centers in Diamond; Including Reflections on Computational Cost and Accuracy
• Nanoscale graphitization and defect evolution in silicon-vacancy center-containing nanodiamonds under high-pressure high-temperature annealing