Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators
arXiv:2206.14845 · doi:10.1021/acs.nanolett.2c03151
Abstract
Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency up to at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by nearly an order-of-magnitude. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources.
References in corpus (12)
- Boson sampling with 20 input photons in 60-mode interferometers at state spaces
- Irradiation of Nanostrained Monolayer WSe for Site-Controlled Single-Photon Emission up to 150 K
- 422 Million Q Planar Integrated All-Waveguide Resonator with a 3.4 Billion Absorption Limited Q and Sub-MHz Linewidth
- Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
- Prospects and challenges of quantum emitters in 2D materials
- Site-Controlled Telecom Single-Photon Emitters in Atomically-thin MoTe2
- Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas
- Room temperature single-photon emitters in silicon nitride
- Purcell-enhanced single photon source based on a deterministically placed WSe monolayer quantum dot in a circular Bragg grating cavity
- Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes
- Waveguide-integrated single-crystalline GaP resonators on diamond
- Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation
Cited by in corpus (11)
- Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride
- Rational Design of Efficient Defect-Based Quantum Emitters
- Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
- Time-dependent Mandel Q parameter analysis for a hexagonal boron nitride single photon source
- Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation
- Nanocavity enhanced photon coherence of solid-state quantum emitters operating up to 30 K
- Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides via Femtosecond Laser Processing
- Van der Waals waveguide quantum electrodynamics probed by infrared nano-photoluminescence
- Dielectric environment engineering via 2D material heterostructure formation on hybrid photonic crystal nanocavity
- Spin-photon Qubits for Scalable Quantum Network
- A scalable method for cavity-enhanced solid-state quantum sensors