Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
arXiv:2304.00130 · doi:10.1063/5.0152721
Abstract
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step towards deterministic quantum photonic circuits in hBN.
References in corpus (7)
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Cited by in corpus (7)
- Roadmap for Photonics with 2D Materials
- Quantum Optics Applications of Hexagonal Boron Nitride Defects
- Quantum efficiency and vertical position of quantum emitters in hBN determined by Purcell effect in hybrid metal-dielectric planar photonic structures
- Reproducible generation of green-emitting color centers in hBN using oxygen annealing
- Organic molecules as single-photon sources
- Deterministic generation of single B centers in hBN by one-to-one conversion from UV centers
- Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride