High-Mobility Tri-Gate $β$-Ga$_2$O$_3$ MESFETs with a Power Figure of Merit over 0.9 GW/cm$^2$

Arkka Bhattacharyya; Saurav Roy; Praneeth Ranga; Carl Peterson; Sriram Krishnamoorthy

doi:10.1109/LED.2022.3196305

paper

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

arXiv:2206.12539 · doi:10.1109/LED.2022.3196305

Abstract

In this letter, fin-shape tri-gate $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm $^{2}$ - a record high for any $β$ -Ga $_{2}$ O $_{3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $β$ -Ga $_{2}$ O $_{3}$ channels allowing for low ON resistances R $_{O N}$ in $β$ -Ga $_{2}$ O $_{3}$ MESFETs. Fin-widths (W $_{f in}$ ) were 1.2-1.5 $μ$ m and there were 25 fins (N $_{f in}$ ) per device with a trench depth of $\sim$ 1 $μ$ m. A $β$ -Ga $_{2}$ O $_{3}$ MESFET with a source-drain length of 6.4 $μ$ m exhibits a high ON current (187 mA/mm), low R $_{O N}$ (20.5 $Ω$ .mm) and a high average breakdown field (4.2 MV/cm). All devices show very low reverse leakage until catastrophic breakdown for breakdown voltages scaled from 1.1kV to $\sim$ 3kV. This work demonstrates the potential of channel engineering in improving $β$ -Ga $_{2}$ O $_{3}$ device performance toward lower conduction losses for low-to-medium voltage applications.

4 pages, 5 pages

High-Mobility Tri-Gate β-Ga2​O3​ MESFETs with a Power Figure of Merit over 0.9 GW/cm2

Abstract

References in corpus (4)

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$