Saurav Roy

most citedLow Temperature Homoepitaxy Of (010)

β

-Ga

_{2}

_{3}

By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

84 citations · 157 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

physics.app-ph2020★ 8 cited

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off b…

physics.app-ph2020★ 65 cited

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$ -Ga $_{2}$ O $_{3}$ by insertion of an ultra-thin SiO $_{2}$ dielectric interlaye…

Low Temperature Homoepitaxy Of (010) β-Ga2​O3​ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Schottky Barrier Height Engineering In β-Ga2​O3​ Using SiO2​ Interlayer Dielectric

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric