Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Abstract

Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate, emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of $4.3\pm 0.1$, whilst improving the lateral resolution by a factor equal to the refractive index of the lens.

References in corpus (3)

• Coherent control of single spins in silicon carbide at room temperature
• Strongly enhanced photon collection from diamond defect centres under micro-fabricated integrated solid immersion lenses
• Room-Temperature Quantum Emitter in Aluminum Nitride

Cited by in corpus (3)

• Polarization study of single color centers in aluminum nitride
• Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens
• Design of free-space couplers for suspended triangular nano-beam waveguides